| NXP and World Advanced announced a joint venture to establish a 12-inch wafer factory for automotive, industrial and other fields. |
| Published：2024/6/11 |
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| 1. NXP and World Advanced announced a joint venture to establish a 12-inch wafer factory
NXP has announced plans to form a manufacturing joint venture, VisionPower Semiconductor Manufacturing (VSMC), with foundries Worldwide Advanced (VIS) to build a new 300mm wafer fab in Singapore. The plant will support 130nm to 40nm mixed-signal, power management, and analog products for the automotive, industrial, consumer, and mobile end markets. The basic process technology is planned to be licensed from TSMC and transferred to the joint venture.
The joint venture will begin construction of the initial phase of the fab in the second half of 2024, pending receipt of all necessary regulatory approvals, with initial production to customers in 2027. The joint venture will operate as an independent commercial foundry supplier, providing two equity partners with guaranteed proportional capacity, with an estimated output of 55,000 300 mm wafers per month in 2029. Following the successful launch of the first phase, a second phase will be considered and developed, pending the commitment of both equity partners.
The total cost of the initial expansion is expected to be $7.8 billion. Advanced World will inject $2.4 billion, representing a 60% stake in the joint venture, and NXP will inject $1.6 billion, representing the remaining 40% stake. Advanced Worldwide and NXP have agreed to contribute an additional $1.9 billion to support long-term capacity infrastructure. The remaining funds, including the loan, will be provided by a third party to the joint venture. The fab will be operated by World Advanced.
2. NXP announced a partnership with ZF to develop SiC traction inverters
NXP has announced a partnership with ZF to develop the next generation of silicon carbide (SiC) -based traction inverter solutions for electric vehicles. The scheme is designed to accelerate the adoption of 800-V and SiC power devices by utilizing NXP's advanced GD316x high-voltage (HV) isolated gate drivers. The series offers safe, efficient, high-performance traction inverters that can be used to extend the range of electric vehicles, reduce the number of recharges, and reduce system-level costs for OEMs.
Traction inverter is a key component of the electric power system of electric vehicles, which converts the DC voltage of the battery into a time-varying AC voltage to drive the motor of the vehicle. Compared to previous generations of silicon-based IGBT and MOSFET power switches, SiC power devices need to be paired with high-voltage isolated gate drivers to take advantage of higher switching frequencies, lower conduction losses, better thermal characteristics, and higher high-voltage robustness.
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